Ce-doping and reduction annealing effects on electronic states in PrCeCuO studied by Cu -edge X-ray absorption spectroscopy
arXiv:1804.10891 · doi:10.7566/JPSJ.87.094710
Abstract
We investigated Ce-substitution and reduction annealing effects on the electronic states at copper sites by Cu -edge x-ray absorption near-edge structure measurements in PrCeCuO (PCCO) with varying and (the amount of oxygen loss during annealing) values. Absorption near-edge spectra were modified by Ce-substitution and reduction annealing in a similar manner with increasing and . Considering electron doping by Ce-substitution, this similarity indicates an increase of electron number at the copper sites due to annealing . Thus, the total number of electrons is determined by the amount of Ce and oxygen ions. Furthermore, quantitative analyses of the spectra clarified that the number of Cu sites, corresponding to the induced electron number by Ce-substitution increases linearly with in the as-sintered PCCO (), whereas is not exactly equal to twice of , which is expected from charge neutrality. For each -fixed sample, tends to exceed 2 with increasing , suggesting the emergence of two types of carrier due to annealing.
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Cited by in corpus (8)
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- Post-growth annealing effects on charge and spin excitations in NdCeCuO
- Revisiting the phase diagram of T*-type LaEuSrCuO using Oxygen -edge X-ray absorption spectroscopy
- Magnetism behavior of -type EuCuO revealed by muon spin rotation/relaxation measurements
- Distinct variation of electronic states due to annealing in LaEuCuO and NdCuO
- Electronic State of T'-PrLaCeCuO () Studied by Compton Scattering