Electronic State of T'-PrLaCeCuO () Studied by Compton Scattering
arXiv:2210.15995 · doi:10.7566/JPSJ.91.114707
Abstract
We have performed Compton scattering measurements on as-grown and reduced single crystals of the electron-doped T'-cuprate Pr1.3-xLa0.7CexCuO4 (x = 0.10) to investigate the effect of reduction annealing on the electronic state. The obtained results have revealed that the numbers of electrons in the O2p orbital in the Zhang-Rice singlet band, the Cu3dx2-y2 orbital, and the Cu3d3z2-r2 orbital are increased by reduction annealing. The increase in the number of Cu3d3z2-r2 electrons suggests the existence of Cu3d3z2-r2 holes in the as-grown single crystal. This is spectroscopic evidence of local hole doping into the Cu3d3z2-r2 orbital around the excess oxygen, as suggested by transport measurements [T. Adachi et al., J. Phys. Soc. Jpn. 82, 063713 (2013)].
12 pages, 2 figures
References in corpus (6)
- Two-Orbital Model Explains the Higher Transition Temperature of the Single-Layer Hg-Cuprate Superconductor Compared to That of the La-Cuprate Superconductor
- Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors
- Novel Electronic State and Superconductivity in the Electron-Doped High-Tc T'-Superconductors
- Coexisting pseudogap, charge transfer gap, and Mott gap energy scales in the resonant inelastic x-ray scattering spectra of electron-doped cuprates
- Pairing Symmetry Studied from Impurity Effects in the Undoped Superconductor T'-LaEuCuO
- Electron-Doping Effect on Tc in the Undoped (Ce-Free) Superconductor T'-La1.8Eu0.2CuO4 Studied by the Fluorine Substitution for Oxygen