Distinct variation of electronic states due to annealing in LaEuCuO and NdCuO
arXiv:2005.10681 · doi:10.1103/PhysRevB.104.214504
Abstract
We performed Cu {\it K}-edge X-ray absorption fine structure measurements on T'-type LaEuCuO (LECO) and NdCuO (NCO) to investigate the variation in the electronic state associated with the emergence of superconductivity due to annealing. The X-ray absorption near-edge structure spectra of as-sintered (AS) LECO are quite similar to those of AS NCO, indicating that the ground state of AS T'-type LECO is a Mott insulator. We found a significant variation of the electronic state at the Cu sites in LECO due to annealing. The electron density after annealing () was evaluated for both superconducting LECO and non-superconducting NCO and found to be 0.40 and 0.05 electrons per Cu, respectively. In LECO but not in NCO, extended X-ray absorption fine structure analysis revealed a softening in the strength of the Cu-O bond in the CuO plane due to annealing, which is consistent with the screening effect on phonons in the metallic state. Since the amounts of oxygen loss due to annealing () for LECO and NCO are comparable with each other, these results suggest distinct electron-doping processes in the two compounds. That electron-doping in NCO approximately follows the relation can be understood if electrons are doped through oxygen deficiency, but the anneal-induced metallic nature and large of LECO suggest a variation of the electronic band structure causes self-doping of carriers. The origin of the difference in doping processes due to annealing is discussed in connection with the size of the charge transfer gap.
arXiv comment6 pages, 4 figures, 1 table
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