The melilite-type compound (Sr$_{1-x}$,$A_x$)$_2$MnGe$_2$S$_6$O ($A$=K, La) being a room temperature ferromagnetic semiconductor

Huan-Cheng Yang; Ben-Chao Gong; Kai Liu; Zhong-Yi Lu

doi:10.1016/j.scib.2018.05.036

paper

The melilite-type compound (Sr $_{1 - x}$ , $A_{x}$ ) $_{2}$ MnGe $_{2}$ S $_{6}$ O ( $A$ =K, La) being a room temperature ferromagnetic semiconductor

arXiv:1804.04519 · doi:10.1016/j.scib.2018.05.036

Abstract

The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage properties, has been a long-term goal of scientists and engineers. Here, by using the spin-polarized density functional theory calculations, we predict a new series of high temperature ferromagnetic semiconductors based on the melilite-type oxysulfide Sr $_{2}$ MnGe $_{2}$ S $_{6}$ O through hole (K) and electron (La) doping. Due to the lack of strong antiferromagnetic superexchange between Mn ions, the weak antiferromagnetic order in the parent compound Sr $_{2}$ MnGe $_{2}$ S $_{6}$ O can be suppressed easily by charge doping with either $p$ -type or $n$ -type carriers, giving rise to the expected ferromagnetic order. At a doping concentration of 25%, both the hole-doped and electron-doped compounds can achieve a Curie temperature ( $T_{c}$ ) above 300 K. The underlying mechanism is analyzed. Our study provides an effective approach for exploring new types of high temperature ferromagnetic semiconductors.

arXiv comment6 pages, 4 figures, 1 table

The melilite-type compound (Sr $_{1 - x}$ , $A_{x}$ ) $_{2}$ MnGe $_{2}$ S $_{6}$ O ( $A$ =K, La) being a room temperature ferromagnetic semiconductor

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The melilite-type compound (Sr1−x​,Ax​)2​MnGe2​S6​O (A=K, La) being a room temperature ferromagnetic semiconductor

Abstract

References in corpus (9)

Cited by in corpus (2)

The melilite-type compound (Sr $_{1 - x}$ , $A_{x}$ ) $_{2}$ MnGe $_{2}$ S $_{6}$ O ( $A$ =K, La) being a room temperature ferromagnetic semiconductor