Magnetic interactions in a proposed diluted magnetic semiconductor (BaK)(ZnMn)P
arXiv:1804.04518 · doi:10.1088/1674-1056/27/6/067103
Abstract
By using first-principles electronic structure calculations, we have studied the magnetic interactions in a proposed BaZnP-based diluted magnetic semiconductor (DMS). For a typical compound Ba(ZnMn)P with only spin doping, due to the superexchange interaction between Mn atoms and the lack of itinerant carriers, the short-range antiferromagnetic coupling dominates. Partially substituting K atoms for Ba atoms, which introduces itinerant hole carriers into the orbitals of P atoms so as to link distant Mn moments with the spin-polarized hole carriers via the - hybridization between P and Mn atoms, is very crucial for the appearance of ferromagnetism in the compound. Furthermore, applying hydrostatic pressure first enhances and then decreases the ferromagnetic coupling in (BaK)(ZnMn)P at a turning point around 15 GPa, which results from the combined effects of the pressure-induced variations of electron delocalization and - hybridization. Compared with the BaZnAs-based DMS, the substitution of P for As can modulate the magnetic coupling effectively. Both the results for BaZnP-based and BaZnAs-based DMSs demonstrate that the robust antiferromagnetic (AFM) coupling between the nearest Mn-Mn pairs bridged by anions is harmful to improving the performance of this II-II-V based DMS materials.
arXiv comment7 pages, 6 figures, 1 table; Accepted by Chinese Physics B (2018)
References in corpus (11)
- Spintronics: Fundamentals and applications
- Superconductivity at 38 K in the iron arsenide (Ba1-xKx)Fe2As2
- Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
- Theory of ferromagnetic (III,Mn)V semiconductors
- The superconductivity at 18 K in LiFeAs system
- Carrier-induced ferromagnetism in p-Zn1-xMnxTe
- Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As
- NMR Investigation of the Diluted Magnetic Semiconductor Li(Zn1-xMnx)P (x = 0.1)
- Theory of Mn-doped I-II-V Semiconductors
- Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins
- Photoemission and X-ray Absorption Studies of the Diluted Magnetic Semiconductor BaK(ZnMn)As Isostructural to Fe-based Superconductors