Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Abstract

Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon waveguides cladded by silicon dioxide. We employed transfer-printing, whereby the three-dimensional stack of photonic nanostructures is assembled in a simple pick-and-place manner. Lasing operation and waveguide-coupling of an assembled single nanolaser are confirmed through micro-photoluminescence spectroscopy. Furthermore, by repetitive transfer-printing, two QD nanolasers integrated onto a single silicon waveguide are demonstrated, opening a path to develop compact light sources potentially applicable for wavelength division multiplexing.

References in corpus (6)

• High Quality factor photonic crystal nanobeam cavities
• Nanolasers grown on silicon
• Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon
• Transfer-printed single photon sources coupled to wire waveguides
• Nanobeam photonic crystal cavity quantum dot laser
• Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

Cited by in corpus (5)

• Strongly coupled single quantum dot-cavity system integrated on a CMOS-processed silicon photonic chip
• In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip
• Hybrid Si-GaAs photonic crystal cavity for lasing and bistability
• Low-loss high-impedance circuit for quantum transduction between optical and microwave photons
• Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon