Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

Abstract

We demonstrated sub-wavelength (~111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRBS) modulation of our CW lasers, we employed a new signal detection technique that employs a superconducting single photon detector and a time-correlated single photon counting module. The results showed that our NW laser was unambiguously modulated at above 10 Gb/s and an open eye pattern was obtained. This is the first demonstration of a telecom-band CW NW laser with high-speed PRBS modulation.

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• Transfer-printed quantum-dot nanolasers on a silicon photonic circuit
• Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems
• Methodological investigation into the noise influence on nanolasers' large signal modulation
• Performance evaluation of on-chip wavelength conversion based on InP/In${}_{1-x}$Ga${}_x$As${}_y$P${}_{1-y}$ semiconductor waveguide platforms
• All-optical dynamic modulation of spontaneous emission rate in hybrid optomechanical cavity quantum electrodynamics systems
• Lasing from SOI-integrated GaAsSb nanowires via resonator-driven optical feedback