Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires

Abstract

The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impossible in conventional thin-film heterostructures. The built-in strain in the core can be regulated via the composition and the thickness of the shell. Thick enough shells become almost strain-free, whereas the thin core undergoes a predominantly-hydrostatic tensile strain, which causes the reduction of the GaAs band gap energy. For the highest strain of 7 % in this work (obtained for x=0.54), a remarkable reduction of the band gap by 40 % was achieved in agreement with theoretical calculations. Such strong modulation of its electronic properties renders GaAs suitable for near-infrared nano-photonics and presumably high electron mobility nano-transistors.

12 pages, 4 figures

References in corpus (6)

• Relativistic separable dual-space Gaussian Pseudopotentials from H to Rn
• Single nanowire solar cells beyond the Shockley-Queisser limit
• Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
• Observation of strongly entangled photon pairs from a nanowire quantum dot
• Strain in Semiconductor Core-Shell Nanowires
• Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires

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• A route for the top-down fabrication of ordered ultrathin GaN nanowires
• Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors
• In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires
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• Hot electron dynamics in a semiconductor nanowire under intense THz excitation
• Machine learning for accelerated bandgap prediction in strain-engineered quaternary III-V semiconductors
• Electromagnetic field emitted by core-shell semiconductor nanowires driven by an alternating current
• Single photon emitters in thin GaAsN nanowire tubes grown on Si
• Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires
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