Observation of Interface Superconductivity in a SnSe2-Epitaxial Graphene van der Waals Heterostructure

Abstract

We report on the direct observation of interface superconductivity in single-unit-cell SnSe2 films grown on graphitized SiC(0001) substrate by means of van der Waals epitaxy. Tunneling spectrum in the superconducting state reveals rather conventional character with a fully gapped order parameter. The occurrence of superconductivity is further confirmed by the presence of vortices under external magnetic field. Through interface engineering, we unravel the mechanism of superconductivity that originates from a two-dimensional electron gas formed at the interface of SnSe2 and graphene. Our finding opens up novel strategies to hunt for and understand interface superconductivity based on van der Waals heterostructures.

arXiv comment7 pages, 7 figures

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Cited by in corpus (11)

• Superconductivity in Li-intercalated 1T-SnSe2 driven by electric-field gating
• Direct visualization of ambipolar Mott transition in cuprate CuO2 planes
• Electronic, vibrational, and electron-phonon coupling properties in SnSe${}_2$ and SnS${}_2$ under pressure
• Charge density waves and Fermi level pinning in monolayer and bilayer SnSe${}_2$
• Gigantic work function in layered AgF2
• Imaging half-unit-cell Cooper-pair density waves in monolayer 1T${}^{\prime }$-MoTe${}_2$
• Interfacial superconductivity in the type-III heterostructure SnSe${}_2$/PtTe${}_2$
• Observation of pseudogap in SnSe2 atomic layers grown on graphite
• Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions
• Enhanced superconductivity in atomically thin noble metals: From quantum confinement to interface-induced Lifshitz transition
• Interfacial superconductivity induced by single-quintuple-layer Bi${}_2$Te${}_3$ on top of FeTe forming van-der-Waals heterostructure