Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Abstract

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

References in corpus (9)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As
• Electron correlations in Mn${}_x$Ga${}_{1-x}$As as seen by resonant electron spectroscopy and dynamical mean field theory
• Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As
• Energetic and spatial bonding properties from angular distributions of ultraviolet photoelectrons: application to the GaAs(110) surface
• Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
• Electronic structure of (Ga,Mn)As revisited

Cited by in corpus (5)

• Bulk Electronic Structure of Lanthanum Hexaboride (LaB6) by Hard X-ray Angle-Resolved Photoelectron Spectroscopy
• Orbital contributions in the element-resolved valence electronic structure of Bi2Se3
• Towards Time-Resolved Atomic Structure Determination by X-Ray Standing Waves at a Free-Electron Laser
• Site-specific surface atom valence band structure via X-ray standing wave excited photoemission
• k-Resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES