Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation

Abstract

Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.

9 pages, 9 figures, 3 tables (+3 pages, 2 figures and 1 table in Supplemental Material)

References in corpus (9)

• Presence of Exotic Electronic Surface States in LaBi and LaSb
• Distinct Electronic Structure for the Extreme Magnetoresistance in YSb
• Evidence of topological insulator state in the semimetal LaBi
• Three-dimensional band structure of LaSb and CeSb:Absence of band inversion
• Origin of the Extremely Large Magnetoresistance in the Semimetal YSb
• Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy
• Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs
• Separation of Electron and Hole Dynamics in the Semimetal LaSb
• Extremely large magnetoresistance and Fermi surface topology of PrSb

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• Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide
• Interplay of Magnetism and Transport in HoBi
• Observation of gapped state in rare-earth monopnictide HoSb
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• First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure
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• Extended Kohler's Rule of Magnetoresistance in TaCo${}_2$Te${}_2$
• Temperature-dependent Fermi surface probed by Shubnikov-de Haas oscillations in topological semimetal candidates DyBi and HoBi
• Direct evidence of electron-hole compensation for XMR in topologically trivial YBi
• Spin-orbital order and excitons in magnetoresistive HoBi
• Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal
• Growth of rare-earth monopnictide DySb single crystal by novel Self-flux method
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