Hybrid functional calculations of electronic structure and carrier densities in rare-earth monopnictides
arXiv:1911.06184 · doi:10.1103/PhysRevB.101.125105
Abstract
The structural parameters and electronic structure of rare-earth pnictides are calculated using density functional theory (DFT) with the Heyd, Scuseria, and Ernzerhof (HSE06) screened hybrid functional. We focus on RE-V compounds, with RE=La, Gd, Er, and Lu, and V=As, Sb, and Bi, and analyze the effects of spin-orbit coupling and treating the RE 4 electrons as valence electrons in the projector augmented wave approach. The results of HSE06 calculations are compared with DFT within the generalized gradient approximation (DFT-GGA) and other previous calculations. We find that all these RE-V compounds are semimetals with electron pockets at the point and hole pockets at . Whereas in DFT-GGA the carrier density is significantly overestimated, the computed carrier densities using HSE06 is in good agreement with the available experimental data.
References in corpus (13)
- Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance
- Numerical extraction of de Haas - van Alphen frequencies from calculated band energies
- Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals
- Compensated semimetal LaSb with unsaturated magnetoresistance
- Presence of Exotic Electronic Surface States in LaBi and LaSb
- GW method applied to localized 4f electron systems
- Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations
- Evidence of topological insulator state in the semimetal LaBi
- Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation
- Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs
- Tuning the electronic and the crystalline structure of LaBi by pressure
- Multiplets Matter: The Electronic Structure of Rare-Earth Semiconductors and Semimetals
- Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Cited by in corpus (7)
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- Trivial to nontrivial topology transition in rare-earth pnictides with epitaxial strain
- Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
- Non-trivial topology in rare-earth monopnictides from dimensionality reduction
- Heterostructure Engineering for Wurtzite LaN
- Magnetostriction of metals with small Fermi-surface pockets: Case of the topologically trivial semimetal LuAs