Topologically protected interface phonons in two-dimensional nanomaterials: hexagonal boron nitride and silicon carbide
arXiv:1712.01449 · doi:10.1039/C8NR04314K
Abstract
We perform both lattice dynamics analysis and molecular dynamics simulations to demonstrate the existence of topologically protected phonon modes in a two-dimensional, monolayer hexagonal boron nitride sheet. The topological phonon modes are found to be localized at an in-plane interface that divides the system into two regions of distinct valley Chern numbers. The dispersion of this topological phonon mode crosses over the frequency gap [1123, 1278] cm^{-1}, which is opened through analogy with the quantum valley Hall effect by breaking inversion symmetry of the boron and nitride atoms in the primitive unit cell. Consequently, vibrational energy with frequency within this gap is topologically protected, resulting in wave propagation that exhibits minimal backscattering, is robust with regards to structural defects such as sharp corners, and exhibits excellent temporal stability. Our findings open up the possibility of realizing topological phonons and mechanics in two-dimensional nanomaterials.
Nanoscale, accepted
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Cited by in corpus (10)
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- Theory and Experimental Investigation of the Quantum Valley Hall Effect
- Topological effects of phonons in GaN and AlxGa1-xN: A potential perspective for tuning phonon transport
- Double Dirac Cones and Topologically Non-Trivial Phonons for Continuous, Square Symmetric (C and C) Unit Cells
- Strain Tunable Phononic Topological Bandgaps in Two-Dimensional Hexagonal Boron Nitride
- Valley-Chern Effect with LC-Resonators: A Modular Platform
- Symmetry-enforced planar nodal chain phonons in non-symmorphic materials
- Observation of Topological Nodal-Ring Phonons in Monolayer Hexagonal Boron Nitride
- Generation of phonon quantum states and quantum correlations among single photon emitters in hexagonal boron nitride
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