Topological effects of phonons in GaN and AlxGa1-xN: A potential perspective for tuning phonon transport

Abstract

Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and disorders, and forbidden backscattering, topological phonon surface states show remarkable potential in addressing this issue. Herein, topological phonon analyses are performed on hexagonal wurtzite GaN to check the topological characteristics of phonons. And other nitrides of the same family, i.e., AlN and AlGaN alloy, are also calculated from a topological phonon phase transition perspective. With the aid of first-principle calculations and topological phonon theory, Weyl phonon states, which host surfaces states without backscattering, are investigated for all these materials. The results show that there is no nontrivial topological phonon state in GaN. However, by introducing Al atoms, i.e., in wurtzite type AlN and AlGaN, more than one Weyl phonon point is found, confirmed by obvious topological characteristics, including non-zero integer topological charges, source/sink in Berry curvature distributions, surface local density of states and surface arcs. As AlN and AlGaN are typical materials in AlGaN/GaN heterostructure based electronics, the existence of topological phonon states in them will benefit thermal management by facilitating the design of one-way interfacial phonon transport without backscattering.

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Cited by in corpus (8)

• Multi-gap topology and non-Abelian braiding of phonons from first principles
• Weyl phonons in chiral crystals
• Degenerate topological line surface phonons in quasi-1D double helix crystal SnIP
• Topological continuum charges of acoustic phonons in 2D
• Phonon thermal transport properties of GaN with symmetry-breaking and lattice deformation induced by the electric field
• Symmetry-enforced planar nodal chain phonons in non-symmorphic materials
• Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices
• Nonlocality and Strength of Interatomic Interactions Inducing the Topological Phonon Phase Transition