Femtosecond valley polarization and topological resonances in transition metal dichalcogenides
arXiv:1711.10454 · doi:10.1103/PhysRevB.98.081406
Abstract
We theoretically introduce the fundamentally fastest induction of a significant population and valley polarization in a monolayer of a transition metal dichalcogenide (i.e., and ). This may be extended to other two-dimensional materials with the same symmetry. This valley polarization can be written and read-out by a pulse consisting of just a single optical oscillation with a duration of a few femtoseconds and an amplitude of . Under these conditions, we predict a new effect of {\em topological resonance}, which is due to Bloch motion of electrons in the reciprocal space where electron population textures are formed defined by non-Abelian Berry curvature. The predicted phenomena can be applied for information storage and processing in PHz-band optoelectronics.
arXiv comment9 pages, 7 figures
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Cited by in corpus (18)
- Light-Induced Valleytronics in Pristine Graphene
- Lightwave topology for strong-field valleytronics
- Topological resonance and single-optical-cycle valley polarization in gapped graphene
- Controlling Valley-Polarisation in Graphene via Tailored Light Pulses
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- Ultrafast valley polarization in bilayer graphene
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