paper

Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi

arXiv:1711.09646 · doi:10.1103/PhysRevB.97.205130

Abstract

The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several non-magnetic semimetals, which has been explained on the basis of either electron-hole compensation or the Fermi surface topology, or the combination of both. Here, we present a single crystal study on MoSi, which exhibits extremely large magnetoresistance, approaching almost 10 % at 2 K and 14 T magnetic field. It is found that the electron-hole compensation level in MoSi evolves with magnetic field, which is resulted from strong Zeeman effect, and found beneficial in boosting the large non-saturating magnetoresistance. The non-trivial Berry phase in the de Haas-van Alphen oscillations and the moderate suppression of backward scattering of the charge carriers lend support for the topological nature of this semimetal. The ultra-large carrier mobility of the topologically protected charge carriers reinforces the magnetoresistance of MoSi2 to an unprecedented large value.

16 pages, 5 Figures and one Table

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