Anomalous Hall conductivity and electronic structures of Si-substituted MnCoAl epitaxial films
arXiv:1711.04223 · doi:10.1103/PhysRevB.97.054427
Abstract
We study anomalous Hall conductivity () and electronic band structures of Si-substituted MnCoAl (MnCoAlSi). First-principles calculations reveal that the electronic band structure is like a spin-gapless system even after substituting a quaternary element of Si for Al up to 0.2 in MnCoAlSi. This means that the Si substitution enables the Fermi level shift without largely changing the electronic structures in MnCoAl. By using molecular beam epitaxy (MBE) techniques, MnCoAlSi epitaxial films can be grown, leading to the systematic control of (0 0.3). In addition to the electrical conductivity, the values of for the MnCoAlSi films are similar to those in MnCoAl films shown in previous reports. We note that a very small of 1.1 S/cm is obtained for 0.225 and the sign of is changed from positive to negative at around 0.25. We discuss the origin of the sign reversal of as a consequence of the Fermi level shift in MCA. Considering the presence of the structural disorder in the MnCoAlSi films, we can conclude that the small value and sign reversal of are not related to the characteristics of spin-gapless semiconductors.
6 pages, 5 figures, accepted for publication in Physical Review B
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