Simulation of gain stability of THGEM gas-avalanche particle detectors
arXiv:1711.02073 · doi:10.1088/1748-0221/13/01/P01015
Abstract
Charging-up processes affecting gain stability in Thick Gas Electron Multipliers (THGEM) were studied with a dedicated simulation toolkit. Integrated with Garfield++, it provides an effective platform for systematic phenomenological studies of charging-up processes in MPGD detectors. We describe the simulation tool and the fine-tuning of the step-size required for the algorithm convergence, in relation to physical parameters. Simulation results of gain stability over time in THGEM detectors are presented, exploring the role of electrode-thickness and applied voltage on its evolution. The results show that the total amount of irradiated charge through electrode's hole needed for reaching gain stabilization is in the range of tens to hundreds of pC, depending on the detector geometry and operational voltage. These results are in agreement with experimental observations presented previously.
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Cited by in corpus (8)
- Measurements of charging-up processes in THGEM-based particle detectors
- The Thick Gas Electron Multiplier and its derivatives: physics, technologies and applications
- Electron transport and electric field simulations in two-phase detectors with THGEM electrodes
- Measurements of the Charging-Up Effect in Gas Electron Multipliers
- Systematic investigation of critical charge limits in Thick GEMs
- Charge and Light Production in the Charge Readout System of a Dual Phase LAr TPC
- Direct measurements of the properties of Thick-GEM reflective photocathodes
- A Novel Manufacturing Process for Glass THGEMs and First Characterisation in an Optical Gaseous Argon TPC