Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

Abstract

We report on Hall field-induced resistance oscillations (HIRO) in a 60 nm-wide GaAs/AlGaAs quantum well with an \emph{in situ} grown back gate, which allows tuning the carrier density $n$. At low $n$, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with $n^{-1/2}$, as expected. Remarkably, population of the second subband (SB2) significantly enhances HIRO, while their frequency now scales as $n^{-1}$. We demonstrate that in this two-subband regime HIRO still originate solely from backscattering of SB1 electrons. The unusual density dependence occurs because the population of SB2 steadily increases, while that of SB1 remains essentially unchanged. The enhancement of HIRO manifests an unexpected, step-like increase of the quantum lifetime of SB1 electrons, which reaches a record value of 52 ps in the two-subband regime.

5 pages, 5 figures

References in corpus (14)

• Magnetotransport in a two-dimensional electron system in dc electric fields
• Non-linear Resistivity of a Two-Dimensional Electron Gas in a Magnetic Field
• Zero differential resistance state of two dimensional electron systems in strong magnetic fields
• Interference oscillations of microwave photoresistance in double quantum wells
• Microwave zero-resistance states in a bilayer electron system
• Role of electron-electron interactions in nonlinear transport in 2D electron systems
• Current-induced magnetoresistance oscillations in two-dimensional electron systems
• Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
• Zero differential resistance in two-dimensional electron systems at large filling factors
• Crossover between distinct mechanisms of microwave photoresistance in bilayer systems
• Hall field-induced resistance oscillations in Ge/SiGe quantum wells
• Impact of Heterostructure Design on Transport Properties in the Second Landau Level of in-situ Back-Gated Two-Dimensional Electron Gases
• Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States
• Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures

Cited by in corpus (1)

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