Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

Abstract

The negatively-charged silicon-vacancy (SiV${}^{-}$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date ($\sim 250$ ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV${}^{-}$ electronic spin coherence by five orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV${}^{-}$ symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV${}^{-}$ spin with 89% fidelity. Coherent control of the SiV${}^{-}$ spin with microwave fields is used to demonstrate a spin coherence time $T_2$ of 13 ms and a spin relaxation time $T_1$ exceeding 1 s at 100 mK. These results establish the SiV${}^{-}$ as a promising solid-state candidate for the realization of scalable quantum networks.

5 pages, 4 figures. Supplemental Material is available as an ancillary file

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Cited by in corpus (10)

• Tin-Vacancy Quantum Emitters in Diamond
• Coherent Acoustic Control of a Single Silicon Vacancy Spin in Diamond
• All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
• Initialization and Readout of Nuclear Spins via negatively charged Silicon-Vacancy Center in Diamond
• Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth
• Optical switching of resonance fluorescence from a single germanium vacancy color center in diamond
• Simulation of topological phases with color center arrays in phononic crystals
• Band-gap-engineered spin-phonon, and spin-spin interactions with defect centers in diamond coupled to phononic crystals
• Effect of phonons on the electron spin resonance absorption spectrum
• Engineering spin defects in hexagonal boron nitride