Electro-optical properties of phosphorene quantum dots
arXiv:1708.02655 · doi:10.1103/PhysRevB.96.085436
Abstract
We study electronic and optical properties of single layer phosphorene quantum dots with various shapes, sizes, and edge types (including disordered edges) subjected to an external electric field normal to the structure plane. Compared to graphene quantum dots, in phosphorene clusters of similar shape and size there is a set of edge states with energies dispersed at around the Fermi level. These states make the majority of phosphorene quantum dots metallic and enrich the phosphorene absorption gap with low-energy absorption peaks tunable by the electric field. The presence of the edge states dispersed at around the Fermi level is a characteristic feature that is independent of the edge morphology and roughness.
14 pages, 13 figures
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- A tight-binding approach to uniaxial strain in graphene
- Tailoring the atomic structure of graphene nanoribbons by STM lithography
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
- Merging of Dirac points in a two-dimensional crystal
- Metallic Graphene Nanodisks
- Electrically Tunable Quasi-Flat Bands, Conductance and Field Effect Transistor in Phosphorene
- Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
- Localization in random fractal lattices
- Electric- and magnetic-field dependence of the electronic and optical properties of phosphorene quantum dots
- Tuning of Zero Energy States in Quantum Dots of Silicene and Bilayer Graphene by Electric Field