Band Structure of Two-dimensional Dirac Semimetal from Cyclotron Resonance

Abstract

Knowing the band structure of materials is one of the prerequisites to understand their properties. Therefore, especially in the last decades, angle-resolved photoemission spectroscopy (ARPES) has become a highly demanded experimental tool to investigate the band structure. However, especially in thin film materials with a layered structure and several capping layers, access to the electronic structure by ARPES is limited. Therefore, several alternative methods to obtain the required information have been suggested. Here, we directly invert the results by cyclotron resonance experiments to obtain the band structure of a two-dimensional (2D) material. This procedure is applied to the mercury telluride quantum well with critical thickness which is characterized by a 2D electron gas with linear dispersion relations. The Dirac-like band structure in this material could be mapped both on the electron and on the hole side of the band diagram. In this material, purely linear dispersion of the hole-like carriers is in contrast to detectable quadratic corrections for the electrons.

18 pages, 6 figures

References in corpus (10)

• The electronic properties of graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Field Theory of Time-Reversal Invariant Insulators
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells
• Terahertz Quantum Hall Effect in a Topological Insulator
• Universal Faraday rotation in HgTe wells with critical thickness
• Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions
• Faraday rotation due to surface states in the topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$

Cited by in corpus (1)

• Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe