Empirical transport model of strained CNT transistors used for sensor applications
arXiv:1706.09611 · doi:10.1007/s10825-016-0823-4
Abstract
We present an empirical model for the nearballistic transport in carbon nanotube (CNT) transistors used as strain sensors. This model describes the intrinsic effect of strain on the transport in CNTs by taking into account phonon scattering and thermally activated charge carriers. As this model relies on a semiempirical description of the electronic bands, different levels of electronic structure calculations can be used as input. The results show that the electronic structure of strained single-walled CNTs with a radius larger than 0.7nm can be described by a fully analytical model in the sensing regime. For CNTs with smaller diameter, parameterized data from electronic structure calculations can be used for the model. Depending on the type of CNTs, the conductance can vary by several orders of magnitude when strain is applied, which is consistent with the current literature. Further, we demonstrate the tuning of the sensor by an external gate which allows shifting the signal amplitude and the strain sensitivity. These parameters have to be balanced to get good sensing properties. Due to its basically analytical nature, the transport model can be formulated as a compact model for circuit simulations.
arXiv comment10 pages, 10 figures
References in corpus (7)
- Tuning carbon nanotube bandgaps with strain
- Band Structure, Phonon Scattering and the Ultimate Performance of Single-Walled Carbon Nanotube Transistors
- Size-dependent effects on electrical contacts to nanotubes and nanowires
- Band gaps of primary metallic carbon nanotubes
- High-frequency performance of scaled carbon nanotube array field-effect transistors
- DFT investigations of the piezoresistive effect of carbon nanotubes for sensor application
- Nanomechanics of CNTs for Sensor Application
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