Strain-Induced Band Engineering in Monolayer Stanene on Sb(111)

Abstract

Two-dimensional (2D) allotrope of tin with low buckled honeycomb structure, named as stanene, is proposed to be an ideal 2D topological insulator with a nontrivial gap larger than 0.1 eV. Theoretical works also pointed out the topological property of stanene occurs by strain tuning. In this letter, we report the successful realization of high quality, monolayer stanene film as well as monolayer stanene nanoribbons on Sb(111) surface by molecular beam epitaxy, providing an ideal platform to the study of stanene. More importantly, we observed a continuous evolution of the electronic bands of stanene across a nanoribbon, which are related to the strain field gradient in stanene. Our work experimentally confirmed that strain is an effective method for band engineering in stanene, which is important for fundamental research and application of stanene.

10 pages, 4 figures

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Cited by in corpus (1)

• Gapped Electronic Structure of Epitaxial Stanene on InSb(111)