High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures

Abstract

We report experimental measurements for ultrathin (< 15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50%, and show that these structures can achieve experimental absorbance > 90%. By coupling electromagnetic simulations and experimental measurements, we show that pn WSe2/MoS2 heterojunctions with vertical carrier collection can have internal photocarrier collection efficiencies exceeding 70%.

ACS Nano, 2017. Manuscript (25 pages, 7 figures) plus supporting information (7 pages, 4 figures)

References in corpus (5)

• Atomically thin p-n junctions with van der Waals heterointerfaces
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
• Channel Length Scaling of MoS2 MOSFETs
• Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Cited by in corpus (7)

• Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
• Device physics of van der Waals heterojunction solar cells
• High open-circuit voltage in transition metal dichalcogenide solar cells
• Tunneling-current-induced local excitonic luminescence in p-doped WSe${}_2$ monolayers
• Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals
• Dimensionality and Anisotropicity Dependence of Radiative Recombination in Nanostructured Phosphorene
• Impact of $A{l}_2{O}_3$ Passivation on the Photovoltaic Performance of Vertical $WS{e}_2$ Schottky Junction Solar Cells