Anisotropic carrier mobility of distorted Dirac cones: theory and application
arXiv:1704.08408 · doi:10.1039/C7CP03736H
Abstract
We have theoretically investigated the intrinsic carrier mobility in semimetals with distorted Dirac cones under both longitudinal and transverse acoustic phonon scattering. An analytic formula for the carrier mobility was obtained. It shows that tilting significantly reduces the mobility. The theory was then applied to 8B-Pmmn borophene and borophane (fully hydrogenated borophene), both of which have tilted Dirac cones. The predicted carrier mobilities in 8B-Pmmn borophene at room temperature are both higher than that in graphene. For borophane, despite its superhigh Fermi velocity, the carrier mobility is lower than that in 8B-Pmmn owing to its smaller elastic constant under shear strain.
arXiv comment24 pages, 5 figures, 1 table
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- Large enhancement of conductivity in Weyl semimetals with tilted cones: Pseudorelativity and linear response
- Anomalous caustics and Veselago focusing in 8-Pmmn borophene p-n junctions with arbitrary junction directions
- Thermoelectric transport properties of borophane
- Anomalous heat flow in 8- borophene with tilted Dirac cones
- Tilted Dirac cones and asymmetric conical diffraction in photonic Lieb-kagome lattices
- Carbon nanotube array as a van der Waals two-dimensional hyperbolic material
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- Tunable wavevector filtering in borophane based normal metal-barrier-normal metal junctions
- Phase-space representation of coherent states generated through SUSY QM for tilted anisotropic Dirac materials
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