Thermal conduction across a boron nitride and silicon oxide interface
arXiv:1703.00669 · doi:10.1088/1361-6463/aa59a8
Abstract
The needs for efficient heat removal and superior thermal conduction in nano/micro devices have triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one of the candidates for thermal management and heat dissipation due to its novel physical properties, i.e. thermal conductor and electrical insulator. Here we reported interfacial thermal resistance between few-layer h-BN and its silicon oxide substrate using differential 3 omega method. The measured interfacial thermal resistance is around ~1.6*10-8 m2K/W for monolayer h-BN and ~3.4*10-8 m2K/W for 12.8nm-thick h-BN in metal/h-BN/SiO2 interfaces. Our results suggest that the voids and gaps between substrate and thick h-BN flakes limit the interfacial thermal conduction. This work provides a deeper understanding of utilizing h-BN flake as lateral heat spreader in electronic and optoelectronic nano/micro devices with further miniaturization and integration.
9 pages, 6 figures
References in corpus (7)
- Boron nitride substrates for high-quality graphene electronics
- Energy Dissipation and Transport in Nanoscale Devices
- Length-dependent thermal conductivity in suspended single-layer graphene
- Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride
- Heat Conduction across Monolayer and Few-Layer Graphenes
- Ballistic to diffusive crossover of heat flow in graphene ribbons
- Superior thermal conductivity in suspended bilayer hexagonal boron nitride