Preparing local strain patterns in graphene by atomic force microscope based indentation

Abstract

Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.

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Cited by in corpus (12)

• Current splitting and valley polarization in elastically deformed graphene
• Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
• Topological flat bands in strained graphene: substrate engineering and optical control
• Dynamic local strain in graphene generated by surface acoustic waves
• Valley notch filter in a graphene strain superlattice: Green's function and machine learning approach
• Electron dynamics in strained graphene
• Enhanced asymmetric valley scattering by scalar fields in non-uniform out-of-plane deformations in graphene
• Tuning transport properties on graphene multi-terminal structures by mechanical deformations
• Graphene nanodrums as valleytronic devices
• Pseudo Electric Field and Pumping Valley Current in Graphene Nano-bubbles
• Emergence of strain-induced moiré patterns and pseudo-magnetic field confined states in graphene
• Band Gaps and Wavefunctions of Electrons Coupled to Pseudo Electromagnetic Waves in Rippled Graphene