Fine structure of high-power microwave-induced resistance oscillations
arXiv:1702.02556 · doi:10.1103/PhysRevB.95.041403
Abstract
We report on observation of a fine structure of microwave-induced resistance oscillations in an ultraclean two-dimensional electron gas. This fine structure is manifested by multiple secondary sharp extrema, residing beside the primary ones, which emerge at high radiation power. Theoretical considerations reveal that this fine structure originates from multiphoton-assisted scattering off short-range impurities. Unique properties of the fine structure allow us to access all experimental parameters, including microwave power, and to separate different contributions to photoresistance. Furthermore, we show that the fine structure offers a convenient means to quantitatively assess the correlation properties of the disorder potential in high-quality systems, allowing separation of short- and long-range disorder contributions to the electron mobility.
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- Hidden Quantum Hall Stripes in AlGaAs/AlGaAs Quantum Wells
- Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells