Nonlinear Properties of Gated Graphene in a Strong Electromagnetic Field
arXiv:1701.01366 · doi:10.1134/S1063778817020041
Abstract
We develop a microscopic theory of a strong electromagnetic field interaction with gated bilayer graphene. Quantum kinetic equations for density matrix are obtained using a tight binding approach within second quantized Hamiltonian in an intense laser field. We show that adiabatically changing the gate potentials with time may produce (at resonant photon energy) a full inversion of the electron population with high density between valence and conduction bands. In the linear regime, excitonic absorption of an electromagnetic radiation in a graphene monolayer with opened energy gap is also studied.
arXiv comment18 pages, 4 figures
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- The Raman Fingerprint of Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Chiral tunneling and the Klein paradox in graphene
- Substrate-induced band gap opening in epitaxial graphene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Measurement of the Optical Conductivity of Graphene
- Graphene-Based Liquid Crystal Device
- Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
- Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence
- Stacking Order dependent Electric Field tuning of the Band Gap in Graphene Multilayers
- Tunable Excitons in Biased Bilayer Graphene