Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films

Abstract

We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{B}{\mathrm{i}}_2\mathrm{S}{\mathrm{e}}_3$, the optimal thickness is about 3-5 nm.

arXiv comment5 pages, 2 figures

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• Spin torque and persistent currents caused by percolation of topological surface states
• Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
• Proximity-induced zero-energy states indistinguishable from topological edge states