Universal stability of two-dimensional traditional semiconductors

Abstract

Interest in two dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac Fermion in graphene, but also as a new paradigm in which stacking layers of distinct two dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultra-thin limit all of the traditional binary semi-conductors studied (a series of 26 semiconductors) stabilize in a two dimensional double layer honeycomb (DLHC) structure, as opposed to the wurtzite or zinc-blende structures associated with three dimensional bulk. Not only does this greatly increase the landscape of two-dimensional materials, but it is shown that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

References in corpus (11)

• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley polarization in MoS2 monolayers by optical pumping
• Two and one-dimensional honeycomb structures of silicon and germanium
• Monolayer honeycomb structures of group IV elements and III-V binary compounds
• Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
• Optical Spectrum of MoS${}_2$: Many-body Effects and Diversity of Exciton States
• Superconductivity in single-layer films of FeSe with a transition temperature above 100 K
• Computing topological invariants without inversion symmetry
• Spin-orbit-free Weyl-loop and Weyl-point semimetals in a stable three-dimensional carbon allotrope
• Understanding topological phase transition in transition metal dichalcogenides

Cited by in corpus (11)

• Two-Dimensional GaN: An Excellent Electrode Material Providing Fast Ion Diffusion and High Storage Capacity for Li-Ion and Na-Ion Batteries
• Realization of AlSb in the double layer honeycomb structure: a robust new class of two-dimensional material
• Realizing intrinsic excitonic insulator by decoupling exciton binding energy from the minimum band gap
• Excitonic Instability and Electronic Property of Two-dimensional AlSb Limit
• Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al${}_2$SbBi with double-layer honeycomb structure
• First-principles design of excitonic insulators: A review
• Electronic and Optical Properties of Ta${}_2$NiSe${}_5$ Monolayer: A First-principles Study
• Two-dimensional ionic crystals: The cases of IA-VII alkali halides and IA-IB CsAu
• A Framework for Identifying Non-van der Waals 2D Materials
• Non-trivial topological valence bands of common diamond and zinc-blende semiconductors
• Stable structures and electronic properties of perovskite oxide monolayers