Gate-tunable band structure of the LaAlO-SrTiO interface
arXiv:1610.02299 · doi:10.1103/PhysRevLett.118.106401
Abstract
The 2-dimensional electron system at the interface between LaAlO and SrTiO has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of cm. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex oxide interfaces.
14 pages, 4 figures
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Cited by in corpus (7)
- Link between the Superconducting Dome and Spin-Orbit Interaction in the (111) LaAlO/SrTiO Interface
- Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
- Ferroelectric control of spin-polarized two-dimensional electron gas
- Superconducting dome with - pairing symmetry in the heavily hole-overdoped copper-oxide planes
- Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO/SrTiO interface
- Understanding the onset of negative electronic compressibility in one- and two-band 2D electron gases: Application to LaAlO/SrTiO
- Artificial oxide heterostructures with non-trivial topology