Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

Abstract

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

arXiv comment15 pages, 5 figures

References in corpus (8)

• Black phosphorus field-effect transistors
• Conventional superconductivity at 203 K at high pressures
• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Gate-tunable Phase Transitions in 1T-TaS${}_2$
• Gate-induced Superconductivity in atomically thin MoS2 crystals
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• Comparative High Pressure Raman Study of Boron Nitride Nanotubes and Hexagonal Boron Nitride
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• Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
• Pressure-Temperature Phase Diagram of Vanadium Dioxide
• CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
• The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
• Ultrafast charge dynamics and photoluminescence in bilayer MoS2
• Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure
• Electronic properties of graphyne-$N$ monolayer and its multilayer: even-odd effect and topological nodal line semimetalic phases
• Sub-micron Circuit Fabrication on Diamond Anvils for Mesoscopic High-Pressure Experiments