High-frequency, scaled MoS2 transistors

Abstract

The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm. In addition, by introducing edge-contacted injection of electrons in trilayer MoS2 devices, we decrease the contact resistance and as a result obtain the highest cutoff frequency of 6 GHz before the de-embedding procedure and 25 GHz after the de-embedding procedure.

in Electron Devices Meeting (IEDM), 2015 IEEE International

References in corpus (3)

• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Channel Length Scaling of MoS2 MOSFETs
• MoS2 Transistors Operating at Gigahertz Frequencies

Cited by in corpus (3)

• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Scaled indium oxide transistors fabricated using atomic layer deposition
• Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics