most citedElectrical Transport Properties of Single-Layer WS2

781 citations · 1.4k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall201410 cited

Avalanche photodiodes based on MoS2/Si heterojunctions

Oriol Lopez-Sanchez, Dumitru Dumcenco, Edoardo Charbon +1

Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide ra…

cond-mat.mes-hall20141 cited

Optically Active Quantum Dots in Monolayer WSe

Ajit Srivastava, Meinrad Sidler, Adrien V. Allain +3

Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spi…

cond-mat.mes-hall2014185 cited

MoS2 Transistors Operating at Gigahertz Frequencies

Daria Krasnozhon, Dominik Lembke, Clemens Nyffeler +2

The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (…

cond-mat.mes-hall2014781 cited

Electrical Transport Properties of Single-Layer WS2

Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang +2

We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We fi…

cond-mat.mes-hall2010450 cited

Visibility of dichalcogenide nanolayers

M. M. Benameur, B. Radisavljevic, S. Sahoo +2

Dichalcogenides with the common formula MX2 are layered materials with electrical properties that range from semiconducting to superconducting. Here, we describe optimal imaging co…