Evidence of nodes in the order parameter of the superconducting doped topological insulator NbBiSe via penetration depth measurements
arXiv:1608.08164 · doi:10.1103/PhysRevB.94.180510
Abstract
The low-temperature variation of the London penetration depth in the candidate topological superconductor NbBiSe (x = 0.25) is reported for several crystals. The measurements were carried out by means of a tunnel-diode oscillator (TDO) technique in both field orientations ( and planes). All samples exhibited power law behavior at low temperatures () clearly indicating the presence of point nodes in the superconducting order parameter. The results presented here are consistent with a nematic odd-parity spin-triplet pairing state in NbBiSe.
6 pages, 5 figures
References in corpus (14)
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Electrically detected interferometry of Majorana fermions in a topological insulator
- Magnetic Penetration Depth in Unconventional Superconductors
- Bulk superconducting phase with a full energy gap in the doped topological insulator Cu_xBi_2Se_3
- Odd-parity topological superconductor with nematic order: Application to CuxBi2Se3
- Local Measurements of the Superconducting Pairing Symmetry in CuxBi2Se3
- Topological surface states in nodal superconductors
- Disorder-induced topological change of the superconducting gap structure in iron pnictides
- Surface spectral function in the superconducting state of a topological insulator
- Superconducting doped topological materials
- Dependence of superconductivity in CuxBi2Se3 on quenching conditions
- Non-fragile superconductivity with nodes in the superconducting topological insulator CuxBi2Se3: Zeeman orbital field and non-magnetic impurities
- Quantum Oscillations in CuBiSe in High Magnetic Fields
- Novel anisotropic spin singlet pairings in CuBiSe and BiTe
Cited by in corpus (23)
- A comprehensive review on topological superconducting materials and interfaces
- Nematic and chiral superconductivity induced by odd-parity fluctuations
- Direction and symmetry transition of the vector order parameter in topological superconductors CuBiSe
- Hybrid symmetry epitaxy of superconducting Fe(Te,Se) film on a topological insulator
- Evidence for singular-phonon-induced nematic superconductivity in a topological superconductor candidate SrBiSe
- Probing the superconducting gap structure in the noncentrosymmetric topological superconductor ZrRuAs
- Quantum oscillations and Dirac-Landau levels in Weyl superconductors
- Superconductivity, pairing symmetry, and disorder in the doped topological insulator SnInTe for x 0.10
- Higher-order topological semimetals and nodal superconductors with an order-two crystalline symmetry
- Superconducting four-fold Fe(Te,Se) film on six-fold magnetic MnTe via hybrid symmetry epitaxy
- Superconducting properties and gap structure of the topological superconductor candidate Ti_(3)Sb
- Unconventional pressure dependence of the superfluid density in the nodeless topological superconductor -PdBi
- Lifshitz transition in dirty nematic superconductor
- An increase in under hydrostatic pressure in the superconducting doped topological insulator NbBiSe
- Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor
- Full superconducting gap in the candidate topological superconductor InPbTe for x = 0.2
- How spectrum-wide quantum criticality protects surface states of topological superconductors from Anderson localization: Quantum Hall plateau transitions (almost) all the way down
- Possible two-component pairings in electron-doped BiSe based on a tight-binding model
- Superconducting and normal-state anisotropy of the doped topological insulator SrBiSe
- Orbital-selective spin-triplet superconductivity in infinite-layer LaNiO
- Unconventional superconductivity from electronic dipole fluctuations
- Sensitivity of superconducting states to the impurity location in layered materials
- Determination of the London penetration depth with the tunnel diode oscillator technique