Strain-induced topological phase transition in phosphorene and phosphorene nanoribbons

Abstract

Using the tight-binding (TB) approximation with inclusion of the spin-orbit interaction, we predict a topological phase transition in the electronic band structure of phosphorene in the presence of axial strains. We derive a low-energy TB Hamiltonian that includes the spin-orbit interaction for bulk phosphorene. Applying a compressive biaxial in-plane strain and perpendicular tensile strain in ranges where the structure is still stable leads to a topological phase transition. We also examine the influence of strain on zigzag phosphorene nanoribbons (zPNRs) and the formation of the corresponding protected edge states when the system is in the topological phase. For zPNRs up to a width of 100 nm the energy gap is at least three orders of magnitude larger than the thermal energy at room temperature.

10 pages, 6 figures

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• Crystallographic Characterization of Black Phosphorene and Its Application in Nanostructures
• Edge magnetic properties of black phosphorene nanoribbons
• Edge and sublayer degrees of freedom for phosphorene nanoribbons with twofold-degenerate edge bands via electric field
• First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure
• Ta2NiSe5: a candidate topological excitonic insulator with multiple band inversions
• Light-induced ultrafast glide-mirror symmetry breaking in black phosphorus