Ta2NiSe5: a candidate topological excitonic insulator with multiple band inversions
arXiv:2201.07750 · doi:10.1103/PhysRevB.105.035138
Abstract
The electronic structures and topological properties of the orthorhombic and monoclinic phases of the quasi-one-dimensional excitonic insulator Ta2NiSe5 are investigated based on density functional theory. In contrast to a single parity or band inversion across the Fermi level in many topological insulators studied previously, there are multiple parity and band inversions with or without spin-orbit coupling in both phases of Ta2NiSe5, resulting in more complex and topologically nontrivial electronic structures. The Dirac cone type surface states of the low-temperature monoclinic phase are also obtained. In this paper, we demonstrate that Ta2NiSe5 is a promising candidate as a three-dimensional topological excitonic insulator.
arXiv comment28 pages, 11 figures
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- A gate-tunable quantum phase transition in a topological excitonic insulator
- Coalescence of multiple topological orders in quasi-one-dimensional bismuth halide chains
- Assignment of excitonic insulators in \textit{ab initio} theories: the case of NiBr
- Electronic and Optical Properties of TaNiSe Monolayer: A First-principles Study