Theory of Orbital Susceptibility on Excitonic Insulator
arXiv:1607.07930 · doi:10.7566/JPSJ.85.093701
Abstract
We study the temperature dependence of the orbital susceptibility of an excitonic insulator on the basis of a two-band model. It is shown that a drastic change (an anomalous enhancement) in susceptibility as a function of temperature occurs owing to the occurrence of additional orbital susceptibility due to the excitonic gap. We calculate explicitly the temperature dependence of orbital susceptibility for a model of TaNiSe, and show that the result is consistent with experimental results.
arXiv comment5 pages, 6 figures, Accepted for publication in J. Phys. Soc. Jpn
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Cited by in corpus (8)
- Strong Coupling Nature of the Excitonic Insulator State in TaNiSe
- Photo-induced enhancement of excitonic order
- Exciton-phonon cooperative mechanism of the triple- charge-density-wave and antiferroelectric electron polarization in TiSe
- Orthorhombic-to-monoclinic transition in TaNiSe due to a zone-center optical phonon instability
- Excitonic Phase Diagram of the Three-Chain Hubbard Model for Semiconducting and Semimetallic TaNiSe
- Theory of Thermal Conductivity on Excitonic Insulator
- Photoinduced dynamics of excitonic order and Rabi oscillation in the two-orbital Hubbard model
- Symmetry breaking states in the half-filled two-orbital Hubbard model with crystalline electric field