Performance of Topological Insulator Interconnects

Abstract

The poor performance of copper interconnects at the nanometer scale calls for new material solutions for continued scaling of integrated circuits. We propose the use of three dimensional time-reversal-invariant topological insulators (TIs), which host backscattering-protected surface states, for this purpose. Using semiclassical methods, we demonstrate that nanoscale TI interconnects have a resistance 1-3 orders of magnitude lower than copper interconnects and graphene nanoribbons at the nanometer scale. We use the nonequilibrium Green function (NEGF) formalism to measure the change in conductance of nanoscale TI and metal interconnects caused by the presence of impurity disorder. We show that metal interconnects suffer a resistance increase, relative to the clean limit, in excess of 500% due to disorder while the TI's surface states increase less than 35% in the same regime.

4 pages, 3 figures

References in corpus (2)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Dirac Electrons on a Sharply Edged Surface of Topological Insulators

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• Aharanov-Bohm oscillations and perfectly transmitted mode in amorphous topological insulator nanowires