Electronic and optical properties of bilayer blue phosphorus
arXiv:1606.00797 · doi:10.1016/j.commatsci.2016.07.015
Abstract
We investigate the electronic and optical properties of monolayer and stacking dependent bilayer blue phosphorus in the framework of density functional theory (DFT) and tight-binding approximations. We extract the hopping parameters of TB Hamiltonian for monolayer and bilayer blue phosphorus by using the DFT results. The variation of energy band gap with applied external electric field for two different stacks of bilayer blue phosphorus are also shown. We examine the linear response of the systems due to the external electromagnetic radiation in terms of the dielectric functions in the DFT theory. The relatively large electronic band gap and possibility of exfoliation form bulk structure due to weak interlayer coupling, make blue phosphorus an appropriate candidate for future electronic devices.
References in corpus (11)
- Electric Field Effect in Atomically Thin Carbon Films
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Semiconducting layered blue phosphorus: A computational study
- Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Phase coexistence and metal-insulator transition in few-layer phosphorene: A computational study
- Electrically Tunable Quasi-Flat Bands, Conductance and Field Effect Transistor in Phosphorene
- Large Enhancement and Tunable Band Gap in Silicene by Small Organic Molecule Adsorption
- Electric field induced gap modification in ultrathin blue phosphorous
- Landau levels and magneto-transport property of monolayer phosphorene
- Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach