Tuning the pn junction at a metal-graphene interface via H2 exposure

Abstract

Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode induces a pn junction in graphene, leading to an asymmetrical resistance between the charge carriers (electron and hole). This asymmetry is well modeled by considering the preferential charge scattering at the pn junction, and we show that it can be modulated in a reversible, selective and asymmetrical manner by exposing H2 to the metal-graphene interface. Our results are valuable for understanding the nature of the metal-graphene interfaces and demonstrate a novel route towards hydrogen sensor application. KEYWORDS: graphene, contact resistance,

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Cited by in corpus (5)

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• Probing the Electronic Properties of Monolayer MoS${}_2$ via Interaction with Molecular Hydrogen
• Tuning the pn junction at a metal-graphene interface via H2 exposure
• Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface