Site-controlled InGaN/GaN single-photon-emitting diode
arXiv:1602.02325 · doi:10.1063/1.4945984
Abstract
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
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References in corpus (5)
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