Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.

arXiv comment7 pages, Advanced Materials (2016); updated abstract

References in corpus (2)

• Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
• In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Cited by in corpus (7)

• Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
• Oxygen migration during resistance switching and failure of hafnium oxide memristors
• Stateful characterization of resistive switching TiO2 with electron beam induced currents
• Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
• Evolutionary optimization of a charge transfer ionic potential model for Ta/Ta-oxide hetero-interfaces
• Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
• Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches