Strong-Field Resonant Dynamics in Semiconductors

Abstract

We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place during short times when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. Asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.

References in corpus (6)

• Angle-resolved photoemission spectroscopy of the cuprate superconductors
• The GW method
• Sub-cycle control of terahertz high-harmonic generation by dynamical Bloch oscillations
• Real-time observation of interfering crystal electrons in high-harmonic generation
• Theory of strong-field injection and control of photocurrent in dielectrics and wide bandgap semiconductors
• Probing the momentum relaxation time of charge carriers in ultrathin semiconductor layers

Cited by in corpus (31)

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• Sub-cycle optical control of current in a semiconductor: from the multiphoton to the tunneling regime
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• Femtosecond valley polarization and topological resonances in transition metal dichalcogenides
• Cooper minimum of high-order harmonic spectra from MgO crystal in an ultrashort laser pulse
• Semiconductor-Bloch Formalism: Derivation and Application to High-Harmonic Generation from Dirac Fermions
• Interaction of carrier envelope phase-stable laser pulses with graphene: the transition from the weak-field to the strong-field regime
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• Insight into High-order Harmonic Generation from Solids: The Contributions of the Bloch Wave-packets Moving on the Group and Phase Velocities
• High-harmonic generation in GaAs beyond the perturbative regime
• Quantum-trajectory analysis for charge transfer in solid materials induced by strong laser fields
• Photocurrent generation in solids via linearly polarized laser
• Carrier-envelope phase effects in graphene
• Formation, stability, and highly nonlinear optical response of excitons to intense light fields interacting with two-dimensional materials
• Adiabatic corrections for velocity-gauge simulations of electron dynamics in periodic potentials
• Computational methods for 2D materials modelling
• Non-Markovian pure dephasing in a dielectric excited by a few-cycle laser pulse
• Strong-Field Bloch Electron Interferometry for Band Structure Retrieval
• Enhanced energy deposition and carrier generation in silicon induced by two-color intense femtosecond laser pulses
• Ensemble properties of charge carriers injected by an ultrashort laser pulse
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• Photovoltaic Effect from the Viewpoint of Time-reversal Symmetry
• Chirp control of directional current in monolayer graphene by intense few-cycle laser