The influence of a strong infrared radiation field on the conductance properties of doped semiconductors

Abstract

This work presents an analytic angular differential cross section formula for the electromagnetic radiation field assisted electron scattering by %% was on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described by the well-known Volkov wave function, which has been used describe strong laser field matter interaction for more than half a century, %% I would remove this time reference for clarity which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with $10^{11}<I<10^{13}$ W/cm${}^2$ intensity.

11 pages, 5 figures

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• Strong-Field Resonant Dynamics in Semiconductors
• Transport properties of a two-dimensional electron gas dressed by light
• How to suppress the backscattering of conduction electrons?
• Laser assisted proton collision on light nuclei at moderate energies
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Cited by in corpus (1)

• Lissajous curves with a finite sum of prime number frequencies