Phosphorene and Doped Monolayers Interfaced TiO with Type-II Band Alignments: Novel Excitonic Solar Cells
arXiv:1512.01675 · doi:10.1021/acs.jpclett.6b00475
Abstract
Phosphorene, a new elemental two dimensional (2D) material recently isolated by mechanical exfoliation, holds the feature of a direct band gap of around 2.0 eV, overcoming graphene's weaknesses (zero band gap) to realize the potential application in optoelectronic devices. Constructing van der Waals heterostructures is an efficient approach to modulate the band structure, to advance the charge separation efficiency, and thus to optimize the optoelectronic properties. Here, we theoretically investigated three type-II heterostructures based on perfect phosphorene and its doped monolayers interfaced with TiO(110) surface. Doping in phosphorene has a tunability on built-in potential, charge transfer, light absorbance, as well as electron dynamics, which helps to optimize the light absorption efficiency. Three excitonic solar cells (XSCs) based on the phosphoreneTiO heterojunctions have been proposed, which exhibit high power conversion efficiencies dozens of times higher than conventional solar cells, comparable to MoS/WS XSC. The nonadiabatic molecular dynamics within the time-dependent density functional theory framework shows ultrafast electron transfer time of 6.110.8 fs, and slow electronhole recombination of 0.581.08 ps, yielding quantum efficiency for charge separation, further guaranteeing the practical power conversion efficiencies in XSC.
References in corpus (19)
- Black phosphorus field-effect transistors
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Observation of tightly bound trions in monolayer MoS2
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- Optical Spectrum of MoS: Many-body Effects and Diversity of Exciton States
- Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
- Electric field effect in ultrathin black phosphorus
- Photocurrent generation with two-dimensional van der Waals semiconductors
- BerkeleyGW: A Massively Parallel Computer Package for the Calculation of the Quasiparticle and Optical Properties of Materials and Nanostructures
- Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
- Tunable optical properties of multilayers black phosphorus thin films
- Oxygen defects in phosphorene
- The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
- New Family of Quantum Spin Hall Insulators in Two-dimensional Transition-Metal Halide with Large Nontrivial Band Gaps
- Performance limits projection of black phosphorous field-effect transistors
- Quasiparticle level alignment for photocatalytic interfaces