Quantum Capacitance of Graphene Sheets and Nanoribbons
arXiv:1512.01122 · doi:10.1201/b19460-15
Abstract
In this chapter, semi-analytical models for the calculation of the quantum capacitance of both monolayer and bilayer graphene and its nanoribbons, are presented. Since electron-hole puddles are experimental facts in all graphene samples, they have been incorporated in our calculations. The temperature dependence of the quantum capacitance around the charge neutrality point is also investigated and the obtained results are in agreement with many features recently observed in quantum capacitance measurements on both monolayer and bilayer graphene devices. Furtheremore, the impact of finite-size and edge effects on the quantum capacitance of graphene nanoribbons is studied taking into account both the edge bond relaxation and third-nearest-neighbour interaction in the band structure of GNRs.
Graphene Science Handbook, Size Dependent properties Ch.13, p.171, 2015, in press (Taylor and Francis, CRC press)
References in corpus (10)
- Energy Gaps in Graphene Nanoribbons
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Interaction phenomena in graphene seen through quantum capacitance
- Density of states and zero Landau level probed through capacitance of graphene
- Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons
- Bilayer graphene with single and multiple electrostatic barriers: band structure and transmission
- Measurement of the electronic compressibility of bilayer graphene
- Insulating behavior in metallic bilayer graphene: Interplay between density inhomogeneity and temperature
- Negative quantum capacitance in graphene nanoribbons with lateral gates
- A Phenomenological Model for the Quantum Capacitance of Monolayer and Bilayer Graphene Devices