Nano-scale strain engineering of graphene and graphene-based devices
arXiv:1511.07631 · doi:10.1007/s10409-015-0548-9
Abstract
Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidences for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nanoscale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.
13 pages, 13 figures. Accepted for publication in Acta Mechanica Sinica (2015)
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Cited by in corpus (7)
- Electronic and optical properties of strained graphene and other strained 2D materials: a review
- Nanoscale Strain Engineering of Giant Pseudo-Magnetic Fields, Valley Polarization and Topological Channels in Graphene
- 3D strain in 2D materials: Experimental test in unsupported monolayer graphene under pressure
- Tight-binding Piezoelectric Theory and Electromechanical Coupling Correlations for Transition Metal Dichalcogenide Monolayers
- Strain induced superconducting pair-density-wave states in graphene
- Bending-induced extension in two-dimensional crystals
- Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures